cll2003 surface mount high voltage silicon switching diode description: the central semiconductor cll2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. marking: cathode band maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 250 v peak repetitive reverse voltage v rrm 250 v average forward current i o 200 ma continuous forward current i f 250 ma peak repetitive forward current i frm 625 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 500 mw operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 350 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =200v 100 na i r v r =200v, t a =150c 100 a bv r i r =100a 250 v v f i f =100ma 1.00 v v f i f =200ma 1.25 v c t v r =0, f=1.0 mhz 5.0 pf t rr i f =i r =30ma, rec. to 3.0ma, r l =100 50 ns sod-80 case r3 (8-january 2010) www.centralsemi.com
cll2003 surface mount high voltage silicon switching diode sod-80 case - mechanical outline marking: cathode band www.centralsemi.com r3 (8-january 2010)
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